Route 01
Optoelectronics
Infrared detectors, semiconductor lasers, quantum light sources and precision measurement devices.
GaSb · T2SL · QCL / ICL
III–V antimonide technology
One material platform, engineered through the chain.
GK Semicoductor connects the 6.1 Å InAs · GaSb · AlSb material system with epitaxy, device engineering, packaging and module integration.
01 / Platform foundation
One material system. Two technology routes.
A lattice-matched 6.1 Å material foundation supports optoelectronic products today and a defined frontier route for high-speed electronics.
Route 02
Frontier electronics
High-mobility heterojunctions for terahertz, high-frequency and low-power logic devices.
HEMT · TFET · DHBT
02 / Full-chain engineering
From epitaxy to delivery.
Material growth, wafer process, packaging and system integration are connected in one engineering chain.
03 / Product evidence
Performance, made measurable.
The source material provides device-level evidence across detector arrays and semiconductor laser products.
Infrared detector
T2SL infrared detectors
Array formats, higher operating temperature and very-long-wave response are documented in the technical record.
1024×1024Array format
>195 KMWIR BLIP
>16 µmVLWIR cut-off
Semiconductor laser
Semiconductor laser sources
Single emitters, bars and integrated modules provide a measured path from narrow-linewidth sources to high-power output.
18.4 WBar
172 WModule
53 dBSMSR
04 / Manufacturing and delivery
Built for scaled delivery.
The technical record supports a connected manufacturing base across epitaxy, wafer process, packaging and module delivery.
2×4″ + 1×6″Compound-semiconductor production lines
20,000+ m²Cleanroom and manufacturing footprint
7Material systems represented in the source record
05 / Application extensions
One platform, four current fields.
The current public application structure connects imaging, precision measurement, processing and optical interconnect.
01
Imaging & Ranging
Infrared imaging and laser ranging for observation, inspection and spatial measurement.
02
Quantum & Precision Measurement
Low-noise detector and source technologies for precision instruments.
03
Processing & Medical
Reliable optoelectronics for process control and wavelength-specific systems.
04
AI Optical Interconnect
Compound-semiconductor emitters and receivers for high-bandwidth links.
III–V antimonide technology
One material platform, engineered through the chain.
GK Semicoductor connects the 6.1 Å InAs · GaSb · AlSb material system with epitaxy, device engineering, packaging and module integration.
01 / Platform foundation
One material system. Two technology routes.
A lattice-matched 6.1 Å material foundation supports optoelectronic products today and a defined frontier route for high-speed electronics.
6.1 Å
InAs · GaSb · AlSb antimonide materials, engineered through molecular beam epitaxy.
Route 01
Optoelectronics
Optoelectronics
Infrared detectors, semiconductor lasers, quantum light sources and precision measurement devices.
GaSb · T2SL · QCL / ICL
Route 02
Frontier electronics
Frontier electronics
High-mobility heterojunctions for terahertz, high-frequency and low-power logic devices.
HEMT · TFET · DHBT
Frontier reserve
02 / Full-chain engineering
From epitaxy to delivery.
Material growth, wafer process, packaging and system integration are connected in one engineering chain.
Epitaxy
Material design and molecular beam epitaxy establish the device foundation.
Device
Architecture and wafer process turn material performance into device performance.
Packaging
Thermal, optical and electrical interfaces are engineered around the device.
System integration
Detectors, laser sources and control electronics become application-ready modules.
03 / Product evidence
Performance, made measurable.
The source material provides device-level evidence across detector arrays and semiconductor laser products.
T2SL infrared detectors
Array formats, higher operating temperature and very-long-wave response are documented in the technical record.
1024×1024Array format
>195 KMWIR BLIP
>16 μmVLWIR cut-off
Semiconductor laser sources
Single emitters, bars and integrated modules provide a measured path from narrow-linewidth sources to high-power output.
2.6 WEmitter
18.4 WBar
172 WModule
53 dBSMSR
Coverage
One antimonide technology base
Laser wavelengths
780 nm – 16 μm
Detector formats
1024×1024 · 640×512 · 128×128
04 / Manufacturing and delivery
Built for scaled delivery.
The technical record supports a connected manufacturing base across epitaxy, wafer process, packaging and module delivery.
From wafer growth and chip process to package verification and system integration, the same engineering chain continues into production.
2×4″ + 1×6″Compound-semiconductor production lines
20,000+ m²Cleanroom and manufacturing footprint
7Material systems represented in the source record
05 / Application extensions
One platform, four current fields.
The current public application structure connects imaging, precision measurement, processing and optical interconnect.
01Imaging & Ranging
02Quantum & Precision Measurement
03Processing & Medical
04AI Optical Interconnect
Frontier reserve
High-speed electronics
HEMT · TFET · DHBT